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MBR30100PT thru MBR30200PT
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
A C(TAB) A C A C A Dimensions TO-247AD
Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102
A=Anode, C=Cathode, TAB=Cathode VRRM V 100 150 200 VRMS V 70 105 140 VDC V 100 150 200
MBR30100PT MBR30150PT MBR30200PT
Symbol I(AV) IFSM dv/dt
Characteristics Maximum Average Forward Rectified Current @TC=125oC
Maximum Ratings 30 250 10000 IF=15A IF=15A IF=30A IF=30A @TJ=25 oC @TJ=125 oC @TJ=25 oC @TJ=125 oC @TJ=25oC @TJ=125oC 0.85 0.70 0.98 0.85 0.05 10 2.2 700 -55 to +150 -55 to +150
Unit A A V/us
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Voltage Rate Of Change (Rated VR) Maximum Forward Voltage (Note 1)
VF
V
IR ROJC CJ TJ TSTG
Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 2)
mA
o
C/W pF
o o
Typical Junction Capacitance Per Element (Note 3) Operating Temperature Range Storage Temperature Range
C C
NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
* Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-247AD molded plastic * Polarity: As marked on the body * Weight: 0.2 ounces, 5.6 grams * Mounting position: Any
MBR30100PT thru MBR30200PT
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
1000
100
TJ=175J
REVERSE CURRENT, IR(mA)
10
TJ=150J TJ=125J TJ=100J TJ=75J
1
0.1
100
0.01
INSTANTANEOUS FORWARD CURRENT, I F(A)
TJ=50J TJ=25J
0.001
TJ=175J TJ=125J TJ=25J
10
0.0001 0 20 40 60 80 100
REVERSE VOLTAGE, VR(V)
Figure 2. Typical Values Of Reverse Current Vs. Reverse Voltage (Per Leg)
1000
1
JUNCTION CAPACITANCE, CT(pF)
TJ=25J
0.1 0 0.5 1 1.5 2 2.5
100 0 20 40 60 80 100
FORWARD VOLTAGE DROP, VFM(V)
REVERSE VOLTAGE, VR(V)
Figure 1. Max. Forward Voltage Drop Characteristics (PerLeg)
Figure 3. Typical Junction Capacitance Vs. Reverse Voltage (Per Leg)
10
THERMAL IMPEDANCE ZthJC (C/W)
1
D = 0.50 D = 0.33 D = 0.25 D = 0.17
0.1
D = 0.08
PDM
t1 t2
0.01
SINGLE PULSE (THERMAL RESISTANCE)
Notes: 1.Duty factor D = t1 / t2 2.Peak Tj = PDM x ZthJC + TC
0.001 0.0000 1
0.0001
0.001
0.01
0.1
1
10
100
t1, RECTANGULAR PULSE DURATION (SECONDS)
Figure 4. Max. Thermal Impedance ZthJC Characteristics (PerLeg)
MBR30100PT thru MBR30200PT
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
180 14
D = 0.20
ALLOWABLE CASE TEMPERATURE,
RTHJC(DC)=2.20 J /W 170 165 160 DC 155 150 145 140 0 5 10 15 20 25 30 35
AVERAGE POWER LOSS, WATTS
175
12 10 8
D = 0.25 D = 0.33 D = 0.50 D = 0.75
RMS LIMIT DC
6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24
AVERAGE FORWARD CURRENT, IF(AV)
AVERAGE FORWARD CURRENT, IF(AV)
Figure 5. Max. Allowable Case Temperature Vs. Average Forward Current (PerLeg)
Figure 6. Forward PowerLoss Characteristics (PerLeg)
1000
NON-REPETITIVE SURGE CURRENT, IFSM(A)
AT ANY RATED LOAD CONDITION AND WITH RATED V RRM APPLIED FOLLOWING SURGE
100 10 100 1000 10000
SQUARE WAVE PULSE DURATION, TP(micro sec)
Figure 7. Max. Non-Repetitive Surge Current (Per Leg)

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